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| AP30N30W Pb Free Plating Product Advanced Power Electronics Corp. 100% Avalanche Test Simple Drive Requirement Lower On-resistance RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 250V 68m 36A Description AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 250 30 36 23 144 208 1.7 3 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.6 40 Units /W /W Data and specifications subject to change without notice 200916052-1/4 AP30N30W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=1mA Min. 250 1.5 Min. - Typ. 0.24 23 63 19 14 28 36 84 45 550 6 1.9 Typ. 235 2.24 Max. Units 68 3.5 10 100 1 100 3 V V/ m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o VGS=10V, ID=15A VDS=VGS, ID=250uA VDS=10V, ID=15A VDS=250V, VGS=0V VDS=200V ,VGS=0V VGS= 30V ID=15A VDS=200V VGS=10V VDS=125V ID=15A RG=10,VGS=10V RD=8.3 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=36A, VGS=0V IS=15A, VGS=0V dI/dt=100A/s Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage 2 2 2 4290 6900 Source-Drain Diode Max. Units 1.5 V ns C Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25 , IAS=30A. 2/4 AP30N30W 50 40 T C = 25 C 40 o ID , Drain Current (A) 10V 7.0V 6.0V T C = 150 o C 30 ID , Drain Current (A) 10V 7.0V 6.0V 5.0V 30 20 20 5.0V V G =4. 5 V 10 10 V G =4. 5 V 0 0 2 4 6 8 0 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 160 2.8 I D =15A T C =25 C RDS(ON) (m ) Normalized RDS(ON) 120 o 2.3 I D =15A V G =10V 1.8 1.3 80 0.8 40 2 4 6 8 10 0.3 -50 0 50 100 150 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 15 12 IS(A) 9 Normalized VGS(th) (V) 1.2 1.5 T j =150 o C 6 1 T j =25 o C 0.5 3 0 0 0.2 0.4 0.6 0.8 1 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP30N30W f=1.0MHz 16 10000 I D = 15 A VGS , Gate to Source Voltage (V) 12 C iss 1000 V DS = 120 V V DS = 160 V V DS = 200 V C (pF) C oss 8 100 4 10 C rss 0 0 20 40 60 80 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 ID (A) 100us 10 0.1 0.1 0.05 1 T c =25 C Single Pulse 0.1 o 1ms 10ms 100ms 1s DC 0.02 PDM t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS =5V 30 VG T j =25 o C T j =150 o C QG 4.5V ID , Drain Current (A) 20 QGS QGD 10 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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